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| EIC1314-12 ISSUED 10/17/2008 13.75-14.50 GHz 12-Watt Internally Matched Power FET Excelics EIC1314-12 .827.010 .669 .120 MIN FEATURES * * * * * * * 13.75- 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 23% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508.008 .442 .168.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105.008 ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G IMD3 PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ 4200mA Gain at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ 4200mA Gain Flatness f = 13.75-14.50GHz VDS = 10 V, IDSQ 4200mA Output 3rd Order Intermodulation Distortion f = 10 MHz 2-Tone Test; Pout = 29.0 dBm S.C.L2 VDS = 10 V, IDSQ 65% IDSS f = 14.50 GHz Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 4200mA f = 13.75-14.50GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 40.5 5 TYP 41 6 MAX UNITS dBm dB 0.6 -42 -45 23 4200 8 -2.5 1.8 4800 10 -4.0 2.0 o dB dBc % mA A V C/W f = 13.75-14.50GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 62 mA Note: 1) Tested with 50 Ohm gate resistor. 2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case mounting. MAXIMUM RATING AT 25C1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 38dBm 175 C -65 to +175 C 75W o o CONTINUOUS2 10V -4V @ 3dB Compression 175 oC -65 to +175 oC 75W Vds Vgs Pin Tch Tstg Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 3 Revised October 2008 EIC1314-12 ISSUED 10/17/2008 13.75-14.50 GHz 12-Watt Internally Matched Power FET Output Power v.s Frequency Gain@1dB compression v.s Frequency 44 42 40 Power/dBm 9.6 8.4 7.2 Gain/dB 6 4.8 3.6 2.4 38 36 34 32 13.5 1.2 0 13.5 13.7 13.9 14.1 Frequency/ GHz 14.3 14.5 14.7 13.7 13.9 14.1 Frequency/GHz 14.3 14.5 14.7 P1dB v.s Frequency G1dB v.s Frequency Typical S-Parameters (T= 25C, 50 system, de-embedded to edge of package) VDS = 10 V, IDSQ 4200mA Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 3 Revised October 2008 EIC1314-12 ISSUED 10/17/2008 13.75-14.50 GHz 12-Watt Internally Matched Power FET Power Dissipation v.s Temperature Total Power Dissipation / W 100 80 60 40 20 0 0 50 100 150 200 Case Temperature / C Pin [S.C.L.] (dBm) Pout [S.C.L.] (dBm) f1 or f2 THIRD-ORDER INTERCEPT POINT IP3 IP3 = Pout + IM3/2 Pout Pin IM3 IM3 f1 f2 (2f1-f2) f1 f2 (2f2-f1) (2f2 - f1) or (2f1 - f2) IM3 v.s Output Power f1=14.5 GHz, f2=14.49 GHz -20 -30 -40 IM3 / dBc -50 -60 -70 -80 13 16 19 22 Pout (S.C.L) / dBm 25 28 31 Typical IMD3 Data (T= 25C) VDS = 10 V, IDSQ 65% IDss Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 3 Revised October 2008 |
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